Application of Exponential Tail-State Distribution Model to the Above-Threshold Characteristics of Zn-Based Oxide Thin-Film Transistors

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 2165-2168

  Takechi, Kazushige ^a   Nakata, Mitsuru ^a   Eguchi, Toshimasa ^a   Yamaguchi, Hirotaka ^b   Kaneko, Setsuo ^b  

^a Technology Research Association for Advanced Display Materials (TRADIM)   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Amorphous silicon; oxide semiconductor; polycrystalline silicon (pc Si); structural disorder; tail state distribution; thin film transistor (TFT)

Indexed keywords

EID: 85008002458     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/TED.2009.2026392     Document Type: Article

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