SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 18, 2011, Pages

Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

(6) Ong, B S a,b Pey, K L a,b Ong, C Y b Tan, C S b Antoniadis, D A a,c Fitzgerald, E A a,d

a SINGAPORE MIT ALLIANCE (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c USA (United States)

d Massachusetts Institute of Technology Cambridge (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITED; DIELECTRIC LAYER; DRIVE CURRENTS; EFFECTIVE MOBILITIES; FLUORINE PASSIVATION; MAXIMUM TRANSCONDUCTANCE; METAL GATE; NONDESTRUCTIVE DEPOSITION; OXIDE/SEMICONDUCTOR INTERFACES; PHYSICAL VAPOR DEPOSITED; TRANSISTOR PERFORMANCE;

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; FLUORINE; ION BEAMS; METALS; MOSFET DEVICES; PASSIVATION; PHYSICAL VAPOR DEPOSITION; TRANSISTORS; VAPORS;

CHEMICAL VAPOR DEPOSITION;

EID: 79957454170 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3584024 Document Type: Article

Times cited : (2)

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