The influence of argon pressure and RF power on the growth of InP thin films

Semiconductor Science and Technology

Volumn 26, Issue 7, 2011, Pages

  Chandra, G Hema ^a   De La Cruz, J Pérez ^a   Ventura, J ^b  

^a UNIVERSITY OF PORTO   (Portugal)

^b UNIVERSITY OF PORTO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON PRESSURE; DIRECT BAND GAP; ELECTRICAL AND OPTICAL PROPERTIES; GLASS SUBSTRATES; HALL MEASUREMENTS; INP; N-TYPE CONDUCTIVITY; OPTICAL ABSORPTION STUDIES; POLYCRYSTALLINE FILM; PREFERRED ORIENTATIONS; RF-MAGNETRON SPUTTERING; RF-POWER; SPUTTERING PARAMETERS; SUBSTRATE TEMPERATURE; ZINCBLENDE STRUCTURES;

ELECTRIC PROPERTIES; INDIUM PHOSPHIDE; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION;

OPTICAL FILMS;

EID: 79956204484     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/7/075017     Document Type: Article

References (35)

1. Sonoda T, Yamamoto Y, Hayafuji N, Yoshida H, Sasaki H, Kitano T, Takamiya S and Ostubo M 1997 Solid-State Electron. 41 1621
2. Ezaki M, Kumagai H, Toyoda K and Obara M 1995 IEEE J. Sel. Top. Quantum Electron. 1 841
3. Kashima Y, Nozawa T and Munakata T 1999 J. Cryst. Growth 204 429
4. Keavney C J, Haven V E and Vernon S M 1990 Proc. 21st IEEE Photovoltaic Specialists Conf. (Kissimimee) pp 141-4
5. Takamoto T, Ikeda E, Agui T, Kurita H, Tanabe T, Tanaka S, Matsubara H, Mine Y, Takagishi T and Yamaguchi M 1997 Proc. 26th IEEE Photovoltaic Specialists Conf. (New York) p 1031
6. Yamaguchi M and Ando K 1988 J. Appl. Phys. 63 5555
7. Gayen R N, Das S N, Dalui S, Paul R, Bhar R and Pal A K 2010 Thin Solid Films 518 3595
8. Hafez M A, Elamrawi K A and Elsayed-Ali H E 2004 Appl. Surf. Sci. 239 36
9. Iribarren A, Castro-Rodríguez R, Ponce-Cabrera L and Pẽa J L 2006 Thin Solid Films 510 134
10. Chattopadhyay K K, Dhar A, Chaudhuri S and Pal A K 1992 Thin Solid Films 208 100
11. Mitra P, Gupta P, Chaudhuri S and Pal A K 1994 Mater. Chem. Phys. 38 81
12. Baker S H, Bayliss S C, Gurman S J, Elgun N and Davis E A 1996 J. Phys.: Condens. Matter 8 1591
13. Ding R, Wang H, Yang H, Shen W, Qiu Z, Luo L, Lau W F, Cheung W Y and Wong S P 2002 Mater. Chem. Phys. 76 262
14. Yoon S F, Zheng H Q, Zhang P H, Mah K W and Ng G I 1998 Thin Solid Films 326 233
15. Parry H J, Ashwin M J, Neave J H and Jones T S 2002 Semicond. Sci. Technol. 17 1209
16. Pi B et al 2007 J. Cryst. Growth 299 243
17. Sahu S N 1992 J. Mater Sci., Mater. Electron. 3 102
18. zta M, Bedir M, Kayali R and Aksoy F 2006 J. Mater Sci., Mater. Electron. 17 841
19. Aksoy F, Kayali R, zta M and Bedir M 2008 J. Phys. Chem. Solids 69 835
20. Tran C A, Masut R A, Cova P, Brebner J L and Leonelli R 1992 J. Cryst. Growth 121 365
21. Hannappel T, Visbeck S, Knorr K, Mahrt J, Zorn M and Willig F 1999 Appl. Phys. A 69 427
22. Perna G, Capozzi V, Augelli V, Ligonzo T, Schiavulli L, Bruno G, Losurdo M, Capezzuto P, Staehli J L and Pallara M 2001 Semicond. Sci. Technol. 16 377
23. Schimper H-J, Kollonitsch Z, Möller K, Seidel U, Bloeck U, Schwarzburg K, Willig F and Hannappel T 2006 J. Cryst. Growth 287 642
24. Yamazaki S, Nakajima K, Komiya S, Kishi Y and Akita K 1983 Appl. Phys. Lett. 43 82
25. Spitzer M B, Keavney D J, Verno S M and Haven V E 1987 Appl. Phys. Lett. 51 364
26. Kuan H, Su Y K and Tzou W J 1994 Proc. 2nd Int. Conf. on Thin Film Physics and Applications vol 2364 ed S Zhou, Y Wang, Y-X Chen and S Mao pp 314-9
27. Henry J and Livingstone J 2000 Int. J. Electron. 87 1025
28. Fornari R, Brinciotti A, Sentiri A, Görög T, Curti M and Zuccalli G 1994 J. Appl. Phys. 75 2406
29. Hofer W O 1991 Sputtering by Particle Bombardment III (Springer Topics in Applied Physics) vol 64 ed R Behrisch and K Wittmaack (Berlin: Springer) p 15-90
30. Cheng H, Sun Y and Hing P 2003 Thin Solid Films 434 112
31. El Hadadi B, Lbibb R and Slaoui A 2009 Vacuum 83 1100
32. Lohn A J, Onishi T and Kobayash N P 2010 Nanotechnology 21 355702
33. Saitoh T, Matsubara S and Minagawa S 1976 Japan. J. Appl. Phys. 15 893
34. Saitoh T, Matsubara S and Minagawa S 1977 Japan. J. Appl. Phys. 16 807
35. Pankove J I 1975 Optical Processes in Semiconductors (New York: Dover)