Metalorganic vapor-phase epitaxy (MOVPE) growth of InGaAsP multiple-quantum-well distributed feedback lasers on InP corrugated substrate

Journal of Crystal Growth

Volumn 204, Issue 4, 1999, Pages 429-433

  Kashima, Y ^a   Nozawa, T ^a   Munakata, T ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CORRUGATED MATERIALS; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

OPTICAL GUIDE LAYERS; SUPPRESSION RATIO;

DISTRIBUTED FEEDBACK LASERS;

EID: 0032672726     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00221-3     Document Type: Article

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