Influence of the deposition conditions on the crystallographic structure and the GaAs refraction index

Vacuum

Volumn 83, Issue 8, 2009, Pages 1100-1105

  El Hadadi, Benachir ^a   Lbibb, Rachid ^a   Slaoui, Abdelkarim ^a  

^a SULTAN MOULAY SLIMANE UNIVERSITY   (Morocco)

Author keywords

Paschen's law; Refraction index of GaAs; Sputtering RF; Structure of GaAs

Indexed keywords

ARGON PRESSURES; CRYSTALLOGRAPHIC STRUCTURES; DEPOSITION CONDITIONS; DEPOSITION PARAMETERS; EXPERIMENTAL STUDIES; PASCHEN'S LAW; RADIO FREQUENCY SPUTTERING METHODS; REFRACTION INDEX OF GAAS; SELF-BIAS VOLTAGES; STRUCTURE OF GAAS; SUBSTRATE DISTANCES; SUBSTRATE TEMPERATURES; THIN FILMS GROWTHS; X- RAY DIFFRACTIONS;

ARGON; GALLIUM ALLOYS; REFRACTION;

SEMICONDUCTING GALLIUM;

EID: 64449086188     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.01.008     Document Type: Article

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