Indium phosphide films prepared by flash evaporation technique: Synthesis and characterization

Thin Solid Films

Volumn 518, Issue 14, 2010, Pages 3595-3603

  Gayen, R N ^a   Das, S N ^a   Dalui, S ^a   Paul, R ^a   Bhar, R ^a   Pal, A K ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

Evaporation; III V semiconductors; Indium phosphide; Optical properties; Photoluminescence

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPES; AVERAGE VALUES; BAND GAPS; BONDING ENVIRONMENT; FLASH EVAPORATION TECHNIQUE; FOURIER; GLASS SUBSTRATES; II-IV SEMICONDUCTORS; INFRARED MEASUREMENTS; INP; MICROSTRUCTURAL INFORMATION; PHOTOLUMINESCENCE PEAK; PLASMA FREQUENCIES; SYNTHESIS AND CHARACTERIZATION; TRANSMISSION ELECTRON MICROSCOPE; ULTRA-SMALL; VALANCE BANDS;

ATOMIC FORCE MICROSCOPY; ELECTRON MICROSCOPES; EVAPORATION; INDIUM; INDIUM PHOSPHIDE; PHOSPHORUS; PHOTOLUMINESCENCE; PLASMA WAVES; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

OPTICAL PROPERTIES;

EID: 77950536706     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.08.054     Document Type: Article

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