Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications

Nanotechnology

Volumn 22, Issue 25, 2011, Pages

  Hoffman, J ^a   Hong, X ^b   Ahn, C H ^a  

^a Yale University   (United States)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; DEVICE PERFORMANCE; FERROELECTRIC FIELDS; FIELD-EFFECT DEVICES; MEMORY ELEMENT; NON DESTRUCTIVE; NON-VOLATILE; NON-VOLATILE DATA; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; OXIDE HETEROSTRUCTURES; OXIDE SYSTEMS; PZT; SWITCHING TIME;

COBALT COMPOUNDS; FERROELECTRICITY; MANGANESE OXIDE; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; PEROVSKITE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES;

FERROELECTRIC MATERIALS;

EID: 79956121902     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/25/254014     Document Type: Article

References (16)

1. Zhou C, Newns D M, Misewich J A and Pattnaik P C 1997 A field effect transistor based on the Mott transition in a molecular layer Appl. Phys. Lett. 70 598-600 (Pubitemid 127638722)
2. Newns D M, Misewich J A, Tsuei C C, Gupta A, Scott B A and Schrott A 1998 Mott transition field effect transistor Appl. Phys. Lett. 73 780-2 (Pubitemid 128673914)
3. Misewich J A and Schrott A G 2000 Room-temperature oxide field-effect transistor with buried channel Appl. Phys. Lett. 76 3632-4
4. 7 - x films Science 284 1152-5 (Pubitemid 29288401)
5. Mathews S, Ramesh R, Venkatesan T and Benedetto J 1997 Ferroelectric field effect transistor based on epitaxial perovskite heterostructures Science 276 238-40 (Pubitemid 27172677)
6. 3 Phys. Rev. B 68 134415
7. Hong X, Posadas A and Ahn C H 2005 Examining the screening limit of field effect devices via the metal-insulator transition Appl. Phys. Lett. 86 142501
8. 3 Appl. Phys. Lett. 95 222114
9. 3 heterostructures for three-dimensional circuit studies Ann. Phys. 13 15-9
10. Hoffman J, Pan X, Reiner J W, Walker F J, Han J P, Ahn C H and Ma T P 2010 Ferroelectric field effect transistors for memory applications Adv. Mater. 22 2957-61
11. 3 multiferroic heterostructures Phys. Rev. Lett. 104 127202
12. 3 ceramics Japan. J. Appl. Phys. 39 5697-703 (Pubitemid 32067109)
13. Ishibashi Y and Takagi Y 1971 Note on ferroelectric domain switching J. Phys. Soc. Japan 31 506-10
14. 3 ferroelectric thin films: role of the 90° domain walls Appl. Phys. Lett. 91 262903
15. Scott J F 2000 Ferroelectric Memories (Berlin: Springer)
16. Li J, Nagaraj B, Liang H, Cao W, Lee C H and Ramesh R 2004 Ultrafast polarization switching in thin-film ferroelectrics Appl. Phys. Lett. 84 1174-6