Fabrication and characterization of AlGaN/GaN double-heterolaser structures on sapphire substrates using single crystalline AlN buffer layers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 8 PART A, 1998, Pages

  Ohba, Yasuo ^a   Yoshida, Hiroaki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Aluminum gallium nitride; Aluminum nitride; Gallium nitride; Heterostructure; Laser; Metalorganic chemical vapor deposition; Sapphire; Semiconductor

Indexed keywords

CLADDING (COATING); HETEROJUNCTIONS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SINGLE CRYSTALS; SUBSTRATES;

ALUMINUM GALLIUM NITRIDE; BUFFER LAYERS;

QUANTUM WELL LASERS;

EID: 0032142278     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l905     Document Type: Article

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