Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1644-1649

  McKay, H A ^a   Feenstra, R M ^a   Schmidtling, T ^b   Pohl, U W ^b   Geisz, J F ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; ELECTRON RESONANCE; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; STATISTICAL METHODS; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

CONDUCTION BAND GAP RESONANCE; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY; GALLIUM ARSENIUM NITRIDE; HIGH RESOLUTION X-RAY DIFFRACTION; INDIUM GALLIUM ARSENIUM NITRIDE; SCANNING TUNNELING SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035535374     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1379967     Document Type: Conference Paper

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