Current-voltage characteristics of GaN and AIGaN p-i-n diodes

Semiconductors

Volumn 32, Issue 3, 1998, Pages 335-338

  Kuznetsov, N I ^a   Irvine, K G ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042357652     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187392     Document Type: Article

References (24)

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