Inductively-loaded half-bridge inverter characterisation of 4H-SiC merged PiN/Schottky diodes up to 230 A and 250°C

Electronics Letters

Volumn 37, Issue 20, 2001, Pages 1261-1262

  Alexandrov, P ^a   Zhao, J H ^b   Wright, W ^a   Pan, M ^a   Weiner, M ^a  

^a UNITED SILICON CARBIDE INC   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRIDGE CIRCUITS; ELECTRIC CHARGE; ELECTRIC ENERGY STORAGE; ELECTRIC INVERTERS; ELECTRIC LOSSES; SILICON CARBIDE;

HALF BRIDGE INVERTERS;

SCHOTTKY BARRIER DIODES;

EID: 0035959789     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010850     Document Type: Article

References (3)

1. Fabrication and testing of 1000 V-60A MPS diodes in an inductive half-bridge circuit
2. SiC power diodes provide breakthrough performance for a wide range of applications
3. Theoretical and experimental study of 4H-SiC junction edge termination