Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing

Applied Physics Letters

Volumn 80, Issue 22, 2002, Pages 4115-4117

  Hazra, Sukti ^a   Sakata, Isao ^a   Yamanaka, Mitsuyuki ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AMORPHOUS SILICON (A-SI:H); AMORPHOUS SILICON FILM; GOVERNING PARAMETERS; NANOCRYSTALLINES; PARACRYSTALLITES; POLYCRYSTALLINE FILM; THERMAL-ANNEALING; ULTRA-THIN;

AMORPHOUS FILMS; AMORPHOUS MATERIALS; METALLIC FILMS; NANOCRYSTALLINE SILICON; ULTRATHIN FILMS;

AMORPHOUS SILICON;

EID: 79956028425     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1482795     Document Type: Article

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