Effects of film quality of hydrogenated amorphous silicon grown by thermal chemical-vapor-depositon on subsequent in-situ hydrogenation processes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3302-3307

  Yamanaka, Mitsuyuki ^a   Sakata, Isao ^a   Sekigawa, Toshihiro ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Hydrogenated amorphous silicon; Hydrogenation; Thermal CVD

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL DEFECTS; FILM GROWTH; HYDROGEN; HYDROGENATION; PASSIVATION; PLASMA APPLICATIONS;

HYDROGEN PLASMA TREATMENT (HPT);

AMORPHOUS FILMS;

EID: 0034206505     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3302     Document Type: Article

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