Photoluminescence of strained and relaxed multilayered Ge islands on Si(001)

Applied Physics Letters

Volumn 81, Issue 7, 2002, Pages 1186-1188

  Palange, E ^a   Di Gaspare, L ^b   Notargiacomo, A ^b   Capellini, G ^b   Evangelisti, F ^b  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b ROMA TRE UNIVERSITY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION BANDS; GE ISLAND; GE QUANTUM DOT; MULTI-LAYERED; PHOTOLUMINESCENCE SPECTRUM; SI(0 0 1);

GERMANIUM; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

SILICON;

EID: 79956024055     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1500776     Document Type: Article

References (21)

1. J. C. Campbell, in Germanium Silicon: Physics and Materials: Optoelectronics in Silicon and Germanium Silicon, edited by R. Hull and J. C. Bean (Academic, San Diego, 1999), p. 347.
2. C. Miesner, T. Asperger, K. Brunner, and G. Abstreiter, Appl. Phys. Lett. 77, 2704 (2000). apl APPLAB 0003-6951
3. G. Capellini, L. Di Gaspare, F. Evangelisti, and E. Palange, Appl. Phys. Lett. 70, 493 (1997); apl APPLAB 0003-6951
4. M. De Seta, G. Capellini, F. Evangelisti, and C. Spinella, J. Appl. Phys. 92, 614 (2002). jap JAPIAU 0021-8979
5. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, Science 279, 353 (1998).
6. I. Baruka and A.-L. Barabàsi, Appl. Phys. Lett. 72, 2102 (1998).
7. G. Capellini, M. De Seta, and F. Evangelisti, Appl. Phys. Lett. 78, 303 (2001). apl APPLAB 0003-6951
8. Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995).
9. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).
10. A. A. Darhuber, P. Schittenhelm, V. Holy, J. Stangl, G. Bauer, and G. Abstreiter, Phys. Rev. B 55, 15652 (1997). prb PRBMDO 0163-1829
11. V. Le Thanh, V. Yam, P. Boucaud, F. Fortuna, C. Ulysse, D. Bouchier, L. Vervoort, and J.-M. Lourtioz, Phys. Rev. B 60, 5851 (1999). prb PRBMDO 0163-1829
12. G. Capellini, L. Di Gaspare, F. Evangelisti, E. Palange, A. Notargiacomo, C. Spinella, and S. Lombardo, Semicond. Sci. Technol. 14, L21 (1999). sst SSTEET 0268-1242
13. G. Abstreiter, P. Schittenhelm, C. Engel, E. Silveira, A. Zrenner, D. Meertens, and W. Jaegar, Semicond. Sci. Technol. 11, 1521 (1996). sst SSTEET 0268-1242
14. O. G. Schmidt and K. Eberl, Phys. Rev. B 61, 13721 (2000). prb PRBMDO 0163-1829
15. V. Yam, V. Le Thanh, Y. Zheng, P. Boucaud, and D. Bouchier, Phys. Rev. B 63, 033313 (2001). prb PRBMDO 0163-1829
16. J. Weber and M. I. Alonso, in Defect Control in Semiconductors, edited by K. Sumino (Elsevier, North-Holland, Amsterdam, 1990), p. 1453.
17. F. Schäffler, Semicond. Sci. Technol. 12, 1515 (1997). sst SSTEET 0268-1242
18. X. Z. Liao, J. Zou, D. J. H. Cockayne, Z. M. Jiang, X. Wang, and R. Leon, Appl. Phys. Lett. 77, 1304 (2000). apl APPLAB 0003-6951
19. X. Z. Liao, J. Zou, D. J. H. Cockayne, Z. M. Jiang, and X. Wang, J. Appl. Phys. 90, 2725 (2001). jap JAPIAU 0021-8979
20. A. V. Kolobov, H. Oyanagi, K. Brunner, P. Schittenhelm, G. Abstreiter, and K. Tanaka, Appl. Phys. Lett. 78, 451 (2001). apl APPLAB 0003-6951
21. T. Takagahara and K. Takeda, Phys. Rev. B 46, 15578 (1992). prb PRBMDO 0163-1829