InAs quantum dots growth by modified droplet epitaxy using sulfur termination

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4580-4583

  Mano, Takaaki ^a,b   Watanabe, Katsuyuki ^a,c   Tsukamoto, Shiro ^a   Imanaka, Yasutaka ^a   Takamasu, Tadashi ^a   Fujioka, Hiroshi ^b   Kido, Giyu ^a   Oshima, Masaharu ^b   Koguchi, Nobuyuki ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Droplet epitaxy; InAs; Photoluminescence; Quantum dots; Sulfur

Indexed keywords

EPITAXIAL GROWTH; LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; SULFUR;

DROPLET EPITAXY; INDIUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034228821     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4580     Document Type: Article

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