Fabrication of InGaAs quantum dots on GaAs(0 0 1) by droplet epitaxy

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 504-508

  Mano, T ^a,b   Watanabe, K ^a,c   Tsukamoto, S ^a   Fujioka, H ^b   Oshima, M ^b   Koguchi, N ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; EPITAXIAL GROWTH; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

DROPLET EPITAXY; SELF-ORGANIZED GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034140721     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00606-5     Document Type: Article

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