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Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 184-188

The effect of EB irradiation with and without hot-jet Cl2 on an ultra-thin GaN layer for selective etching

(3) Yoshida, Seikoh a,c Sasaki, Masahiro b,c Ishikawa, Tomonori c

a Furakawa Electric Co (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

c Optoelectronics Technology Research Laboratory (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; DESORPTION; ELECTRON BEAMS; ETCHING; FILM GROWTH; IN SITU PROCESSING; IRRADIATION; MASKS; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; ULTRATHIN FILMS;

AUGER SIGNAL INTENSITY; ELECTRON BEAM IRRADIATION; ELECTRON BEAM STIMULATED DESORPTION; SELECTIVE AREA GROWTH; SELECTIVE ETCHING;

SURFACE TREATMENT;

EID: 0030564351 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00283-8 Document Type: Article

Times cited : (3)

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