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Volumn 4, Issue SUPPL. 1, 1999, Pages

Electrical characterization of defects introduced in n-GaN during high energy proton and He-ion irradiation

Author keywords

[No Author keywords available]

Indexed keywords

LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHASE SEPARATION; SILICON CARBIDE; SOLID SOLUTIONS; SOLUBILITY; X RAY DIFFRACTION ANALYSIS;

EID: 3442900307     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300003124     Document Type: Conference Paper
Times cited : (9)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.