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Volumn 4, Issue SUPPL. 1, 1999, Pages
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Electrical characterization of defects introduced in n-GaN during high energy proton and He-ion irradiation
a a b b c c
c
CRHEA CNRS
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
LATTICE CONSTANTS;
METALLORGANIC VAPOR PHASE EPITAXY;
OPTICAL PROPERTIES;
PHASE SEPARATION;
SILICON CARBIDE;
SOLID SOLUTIONS;
SOLUBILITY;
X RAY DIFFRACTION ANALYSIS;
FULL WIDTH AT HALF MAXIMUM (FWHM);
LATTICE MISMATCH;
REACTANTS;
GALLIUM NITRIDE;
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EID: 3442900307
PISSN: 10925783
EISSN: None
Source Type: Journal
DOI: 10.1557/s1092578300003124 Document Type: Conference Paper |
Times cited : (9)
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References (15)
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