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IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn 2000-January, Issue , 2000, Pages 43-46

Electron irradiation induced defects in n-GaN

(6) Goodman, S A a Auret, F D a Legodi, M J a Myburg, G a Beaumont, B b Gibart, P b

Author keywords

Africa; Atomic measurements; Electron traps; Filling; Gallium nitride; Gamma ray effects; Physics; Spectroscopy; Strontium; Temperature

Indexed keywords

ATOMIC PHYSICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRON TRAPS; ELECTRONS; FILLING; GALLIUM NITRIDE; GAMMA RAYS; INSULATING MATERIALS; IRRADIATION; PHYSICS; POINT DEFECTS; SPECTROSCOPY; STRONTIUM; TEMPERATURE;

AFRICA; ATOMIC MEASUREMENTS; ELASTIC DISPLACEMENTS; EPITAXIAL LATERAL OVERGROWTH; GAMMA-RAY EFFECTS; HIGH ENERGY GAMMA RAYS; HIGH-ENERGY ELECTRON IRRADIATION; IRRADIATION-INDUCED DEFECTS;

ELECTRON IRRADIATION;

EID: 84950106497 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/SIM.2000.939194 Document Type: Conference Paper

Times cited : (4)

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