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Volumn 210, Issue 1, 2000, Pages 273-277

Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

(12) Emtsev, V V a Davydov, V Yu a Lundin, V V a Poloskin, D S a Aderhold, J b Klausing, H b Mistele, D b Rotter, T b Stemmer, J b Fedler, F b Semchinova, O b Graul, J b

a IOFFE INSTITUTE (Russian Federation)

b LEIBNIZ UNIVERSITY HANNOVER (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC VARIABLES MEASUREMENT; GAMMA RAYS; NITRIDES; POINT DEFECTS; RADIATION EFFECTS; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033887789 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00695-8 Document Type: Article

Times cited : (3)

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- to be published
- V.V. Entsev, V.Yu. Davydov, V.V. Koslowskii, V.V. Lundin, A.N. Smirnov, N.M. Schmidt, A.S. Usikov, Semiconductor Sci. Technol., to be published.
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