Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy

Applied Physics Letters

Volumn 80, Issue 9, 2002, Pages 1550-1552

  Valcheva, E ^a   Paskova, T ^a   Persson, P O A ^a   Hultman, L ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DOMAIN BOUNDARY; GAN LAYERS; GAN/SAPPHIRE; HYDRIDE VAPOR PHASE EPITAXY; INITIAL STAGES; MISFIT DEFECTS; SAPPHIRE SURFACE; STRAIN RELAXATION MECHANISM; VAPOR PHASE EPITAXIAL;

EPITAXIAL GROWTH; HYDRIDES; NUCLEATION; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

GALLIUM NITRIDE;

EID: 79956017005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1455698     Document Type: Article

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