Inversion domain boundaries in GaN grown on sapphire

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 423-428

  Romano, L T ^a   Northrup, J E ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; NITRIDES; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY; INVERSION DOMAIN BOUNDARIES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030697682     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)