|
Volumn 80, Issue 6, 2002, Pages 962-964
|
Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells
a a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
CRYSTAL QUALITIES;
DEGRADATION MECHANISM;
EMISSION WAVELENGTH;
GAINNAS;
GAS FLOWS;
HETERO INTERFACES;
INTERMEDIATE LAYERS;
MOCVD METHODS;
NONRADIATIVE CENTERS;
OPTICAL QUALITIES;
DEGRADATION;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOTOLUMINESCENCE;
SEMICONDUCTOR QUANTUM WELLS;
|
EID: 79956006693
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1448656 Document Type: Article |
Times cited : (9)
|
References (15)
|