Reduction of threshold voltage deviation in Damascene metal gate MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 257-260

  Yagishita, Atsushi ^a   Saito, Tomohiro ^a   Nakajima, Kazuaki ^a   Inumiya, Seiji ^a   Matsuo, Koji ^a   Akasaka, Yasushi ^a   Ozawa, Yoshio ^a   Yano, Hiroyuki ^a   Minamihaba, Gaku ^a   Matsui, Yukiteru ^a   Tsunashima, Yoshitaka ^a   Suguro, Kyoichi ^a   Arikado, Tsunetoshi ^a   Okumura, Katsuya ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL ORIENTATION DEVIATION; DAMASCENE METAL GATE MOSFETS; SUBTHRESHOLD SWING FACTOR; THRESHOLD VOLTAGE DEVIATION;

MOSFET DEVICES;

EID: 0033312231     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)