GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

Applied Physics Letters

Volumn 80, Issue 11, 2002, Pages 1933-1935

  Jeon, Seong Ran ^a   Oh, Chang Sok ^a   Yang, Jeon Wook ^a   Yang, Gye Mo ^a   Yoo, Byueng Su ^b  

^a Chonbuk National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BURIED TUNNEL JUNCTION; CURRENT APERTURES; CURRENT BLOCKING LAYERS; CURRENT CONFINEMENT; ELECTRON CURRENTS; HOLE INJECTION; INJECTION CURRENTS; LATERAL CURRENT INJECTIONS; TUNNEL CONTACTS; VERTICAL-CAVITY SURFACE EMITTING LASER;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SURFACE EMITTING LASERS;

TUNNEL JUNCTIONS;

EID: 79955987353     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459487     Document Type: Article

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