Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources

Applied Physics Letters

Volumn 71, Issue 24, 1997, Pages 3468-3470

  Wierer, J J ^a   Evans, P W ^a   Holonyak Jr , N ^a   Kellogg, D A ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAMS; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; OXIDATION; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS;

AMPLIFIED SPONTANEOUS EMISSION; DISTRIBUTED BRAGG REFLECTORS; VERTICAL CAVITY SURFACE EMITTING LASERS; WET ETCHING;

SEMICONDUCTOR LASERS;

EID: 0031358735     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120400     Document Type: Article

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