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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 3997-4001

Improvement of current injection uniformity and device resistance in long-wavelength vertical-cavity surface-emitting laser using a tunnel junction

(6) Sekiguchi, Shigeaki a Miyamoto, Tomoyuki a Kimura, Tadayoshi a Okazaki, Gen a Koyama, Fumio a Iga, Kenichi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Carbon doped aluminum arsenide; Injection current uniformity; Long wavelength VCSEL; Metalorganic chemical vapor deposition; Resistance network model; Tunnel junction

Indexed keywords

ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; ESTIMATION; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TUNNEL JUNCTIONS;

CARBON DOPED ALUMINUM ARSENIDE; CARRIER DISTRIBUTION; CURRENT INJECTION; RESISTANCE NETWORK MODEL; VERTICAL CAVITY SURFACE EMITTING LASERS;

INJECTION LASERS;

EID: 0034216132 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.3997 Document Type: Article

Times cited : (18)

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