Memristive behavior observed in a defected single-walled carbon nanotube

IEEE Transactions on Nanotechnology

Volumn 10, Issue 3, 2011, Pages 582-586

  Bushmaker, Adam W ^a   Chang, Chia Chi ^a   Deshpande, Vikram V ^b,c,d   Amer, Moh R ^a   Bockrath, Marc W ^b,c,d   Cronin, Stephen B ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c Columbia University ^*  (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Annealing; carbon nanotube (CNT); defects; lasers; memristive systems

Indexed keywords

CURRENT FLOWING; DEFECT STATE; DIRECT MEASUREMENT; ELECTRICAL BEHAVIORS; IONIC SYSTEMS; LANDAUER; LASER IRRADIATIONS; MEMRISTIVE BEHAVIOR; MEMRISTIVE SYSTEMS; NANO-SCALE SYSTEM; NANO-STRUCTURING; RESONANT ELECTRON SCATTERING; TECHNOLOGICAL ADVANCES; WORKING DEVICE;

DEFECTS; ELECTRON ENERGY LOSS SPECTROSCOPY; MESFET DEVICES;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 79955896613     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2053717     Document Type: Article

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