Gate voltage controllable non-equilibrium and non-ohmic behavior in suspended carbon nanotubes

Nano Letters

Volumn 9, Issue 8, 2009, Pages 2862-2866

  Bushmaker, Adam W ^a,b   Deshpande, Vikram V ^a,b   Hsieh, Scott ^a,b   Bockrath, Marc W ^a,b   Cronin, Stephen B ^a,b  

^a University of Southern California ^*  (United States)

^b California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DETAILED MODELS; DOPING DEPENDENCE; ELECTRICAL CONDUCTANCE; EXPERIMENTAL DATA; GATE VOLTAGES; HIGH VOLTAGE BIAS; LANDAUER; METALLIC SINGLE-WALLED CARBON NANOTUBES; NEGATIVE DIFFERENTIAL CONDUCTANCE; NON EQUILIBRIUM; NONLINEAR BEHAVIOR; NONOHMIC BEHAVIOR; THERMAL EQUILIBRIUMS; TRANSPORT MODELS;

CARBON NANOTUBES; ELECTRIC POTENTIAL; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM DOTS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 68949086405     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl901042w     Document Type: Article

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