Electron beam induced freezing of positive tone, EUV resists for directed self assembly applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7970, Issue , 2011, Pages

  Cheng, Han Hao ^a   Keen, Imelda ^a   Yu, Anguang ^a   Chuang, Ya Mi ^a   Blakey, Idriss ^a   Jack, Kevin S ^a   Leeson, Michael J ^b   Younkin, Todd R ^b   Whittaker, Andrew K ^a  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b INTEL CORPORATION   (United States)

Author keywords

Block copolymer; Directed self assembly; Electron beam lithography; EUV; Resist freezing

Indexed keywords

CRITICAL DIMENSION; CROSSLINKED; DIRECTED SELF ASSEMBLY; DOUBLE PATTERNING; EUV; EUV RESISTS; GRAPHOEPITAXY; HIGH PRECISION; LINE EDGE ROUGHNESS; METROLOGICAL ANALYSIS; OPEN SOURCES; PATTERN DENSITY; POSITIVE TONE; POSITIVE-TONE RESISTS; POTENTIAL APPLICATIONS; RESIST FREEZING;

BLOCK COPOLYMERS; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONS; GLASS TRANSITION; PHOTORESISTS; SELF ASSEMBLY; SURFACE TREATMENT;

FREEZING;

EID: 79955896346     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.881491     Document Type: Conference Paper

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