Improvement of resistance switching properties for metal/La 0.7Ca 0.3MnO 3/Pt devices

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 5, 2011, Pages 1041-1046

  Yang, Rui ^a,b   Li, Xiaomin ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

La 0.7Ca 0.3MnO 3; metal electrodes; random access memory; resistance switching properties; thin films

Indexed keywords

AG ELECTRODE; AL ELECTRODE; ATOMIC RATIO; INTERFACE STRUCTURES; LA 0.7CA 0.3MNO 3; LAYERED STRUCTURES; METAL ELECTRODES; POLYCRYSTALLINE; RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; RESISTANCE SWITCHING PROPERTIES; SWITCHING SPEED;

ALUMINUM; CALCIUM; DURABILITY; ELECTRODES; LANTHANUM; MANGANESE OXIDE; PLATINUM; RANDOM ACCESS STORAGE; SILVER ALLOYS; SWITCHING;

SILVER;

EID: 79955895183     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000079     Document Type: Article

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