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Applied Physics A: Materials Science and Processing

Volumn 103, Issue 2, 2011, Pages 323-328

Ion implantation damage and crystalline-amorphous transition in Ge

(3) Impellizzeri, G a Mirabella, S a Grimaldi, M G a

a UNIVERSITY OF CATANIA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COLLISION CASCADE; CRITICAL DAMAGE; CRYSTALLINE GE; DAMAGE RATE; EXPERIMENTAL STUDIES; FLUENCES; GE SUBSTRATES; IMPLANTATION DAMAGE; IMPLANTATION ENERGIES; LIQUID NITROGEN TEMPERATURE; LOW MOBILITY; ROOM TEMPERATURE; RUTHERFORD BACK-SCATTERING SPECTROMETRY; STOPPING POWER; TRANSITION PHASE;

CRYSTALLINE MATERIALS; ION IMPLANTATION; IONS; POINT DEFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETRY;

GERMANIUM;

EID: 79955860345 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-6123-0 Document Type: Article

Times cited : (38)

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