Micro- and macro-structure of implantation-induced disorder in Ge

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 1033-1037

  Glover, C J ^a   Ridgway, M C ^a   Byrne, A P ^a   Yu, K M ^b   Foran, G J ^c   Clerc, C ^d   Hansen, J L ^e   Nylandsted Larsen, A ^e  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^d CNRS   (France)

^e AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; MATHEMATICAL MODELS; MICROSTRUCTURE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; X RAY SPECTROSCOPY;

EXTENDED X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; PERTURBED ANGULAR CORRELATION;

ION IMPLANTATION;

EID: 0033901719     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00887-3     Document Type: Article

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