B electrical activation in crystalline and preamorphized Ge

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 56-59

  Bruno, E ^a   Impellizzeri, G ^a   Mirabella, S ^a   Piro, A M ^a   Irrera, A ^a   Grimaldi, M G ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

Amorphous; Boron; Crystal; Damage; Electrical activation; Germanium

Indexed keywords

BORON; CHEMICAL ACTIVATION; CRYSTALLINE MATERIALS; GERMANIUM COMPOUNDS; HOLE MOBILITY;

ACTIVATION MECHANISMS; CRYSTALLINE C; DAMAGE; ELECTRICAL ACTIVATION; ELECTRICAL ACTIVITIES; FLUENCES; GERMANIUMS (GE); HOLE FLUENCE; IMPLANTATION CONDITIONS; METASTABILITIES;

GERMANIUM;

EID: 56949091072     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.09.001     Document Type: Article

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