Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrate

Optics Express

Volumn 19, Issue 10, 2011, Pages 9385-9391

  Oh, Tae Su ^a   Jeong, Hyun ^a   Lee, Yong Seok ^a   Park, Ah Hyun ^a   Seo, Tae Hoon ^a   Kim, Hun ^a   Lee, Kang Jea ^a   Jeong, Mun Seok ^b   Suh, Eun Kyung ^a  

^a Chonbuk National University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; MICROSTRUCTURE; SAPPHIRE;

CONFOCAL SCANNING; DOMINANT FACTOR; FAR FIELD; FLAT AREA; GAN LIGHT-EMITTING DIODES; GAN-BASED LIGHT-EMITTING DIODES; LIGHT EXTRACTION; LIGHT OUTCOUPLING; OPTICAL PATH; RAY TRACING SIMULATION; SAPPHIRE SUBSTRATES; TOP SURFACE;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79955814899     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.009385     Document Type: Article

References (16)

1. S. Nakamura, "Current status of GaN-based solid state lighting," MRS Bull. 34(02), 101-107 (2009).
2. J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructures light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84(19), 3885 (2004).
3. Z. Liliental-Weber, and D. Cherns, "Microstructure of lateral overgrown GaN layers," J. Appl. Phys. 89(12), 7833-7840 (2001).
4. J.-F. Carlin, C. Zellweger, J. Dorsaz, S. Nicolay, G. Christmann, E. Feltin, R. Butté, and N. Grandjean, "Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials," Phys. Status Solidi 242(11), 2326-2344 (2005) (b). (Pubitemid 41335602)
5. J. K. Kim, A. N. Noemaun, F. W. Mont, D. Meyaard, E. F. Schubert, D. J. Poxson, H. Kim, C. Sone, and Y. Park, "Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars," Appl. Phys. Lett. 93(22), 221111 (2008).
6. T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E.-K. Suh, "Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster," Appl. Phys. Lett. 95(11), 111112 (2009).
7. T. V. Cuong, H. S. Cheong, H. G. Kim, H. Y. Kim, C.-H. Hong, E. K. Suh, H. K. Cho, and B. H. Kong, "enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning," Appl. Phys. Lett. 90(13), 131107 (2007).
8. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate," Jpn. J. Appl. Phys. 41(12B), L1431-L1433 (2002).
9. D.-H. Jang, J.-I. Shim, and K. Y. Yoo, "Theoretical analysis on the light extraction efficiency of GaN-based light-emitting diodes by using the ray tracing method," J. Korean Phys. Soc. 54(6), 2373-2377 (2009).
10. H.-Y. Shin, S. K. Kwon, Y. I. Chang, M. J. Cho, and K. H. Park, "Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate," J. Cryst. Growth 311(17), 4167-4170 (2009).
11. C.-T. Chang, S.-K. Hsiao, E. Y. Chang, Y.-L. Hsiao, C.-Y. Lu, H.-C. Chang, K.-W. Cheng, and C.-T. Lee, "460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing," IEEE Photon. Technol. Lett. 21(19), 1366-1368 (2009).
12. T. S. Oh, S. H. Kim, T. K. Kim, Y. S. Lee, H. Jeong, G. M. Yang, and E.-K. Suh, "GaN-based light-emitting diodes on micro-lens patterned sapphire substrate," Jpn. J. Appl. Phys. 47(7), 5333-5336 (2008).
13. S.-H. Park, H. Jeon, Y.-J. Sung, and G.-Y. Yeom, "Refractive sapphire microlenses fabricated by chlorine-based inductively coupled plasma etching," Appl. Opt. 40(22), 3698-3702 (2001).
14. Y. Nakano, O. Fujishima, and T. Kachi, "Effect of p-type activation ambient on acceptor levels in Mg-doped GaN," J. Appl. Phys. 96(1), 415-419 (2004).
15. T. S. Oh, H. Jeong, Y. S. Lee, T. H. Seo, A. H. Park, H. Kim, K. J. Lee, M. S. Jeong, and E.-K. Suh, "Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate," Thin Solid Films 519(8), 2398-2401 (2011).
16. G. A. Onushkin, S.-S. Hong, J.-H. Lee, J.-S. Park, J.-K. Son, M.-H. Kim, and Y. J. Park, "Local electroluminescence and time-resolved photoluminescence study of InGaN light-emitting diodes," Appl. Phys. Lett. 95(10), 101904 (2009).