Local electroluminescence and time-resolved photoluminescence study of InGaN light-emitting diodes

Applied Physics Letters

Volumn 95, Issue 10, 2009, Pages

  Onushkin, Grigory A ^a   Hong, Sang Su ^b   Lee, Jin Hyun ^a   Park, June Sik ^b   Son, Joong Kon ^a   Kim, Min Ho ^a   Park, Yongjo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; ACTIVE REGIONS; BIASING CONDITIONS; ELECTRIC FIELD FLUCTUATIONS; ELECTROLUMINESCENCE INTENSITY; GAN LAYERS; HIGH CURRENTS; HOLE INJECTION; INHOMOGENEOUS DISTRIBUTION; LOCAL TIME; LUMINESCENCE PROPERTIES; MULTIPLE QUANTUM WELLS; NON-UNIFORM DISTRIBUTION; NONUNIFORMITY; PHOTOLUMINESCENCE PROPERTIES; TIME-RESOLVED PHOTOLUMINESCENCE;

CURRENT DENSITY; ELECTRIC FIELDS; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 70249133293     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3224896     Document Type: Article

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