Si nanowire FET and its modeling

Science China Information Sciences

Volumn 54, Issue 5, 2011, Pages 1004-1011

  Iwai, Hiroshi ^a   Natori, Kenji ^a   Shiraishi, Kenji ^b   Iwata, Jun ichi ^b   Oshiyama, Atsushi ^c   Yamada, Keisaku ^b   Ohmori, Kenji ^b   Kakushima, Kuniyuki ^a   Ahmet, Parhat ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Modeling; MOSFET; Si nanowire

Indexed keywords

EID: 79955812201     PISSN: 1674733X     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11432-011-4220-0     Document Type: Article

References (24)

1. Iwai H. Roadmap for 22 nm and beyond. Microelectron Eng, 2009, 86: 1520-1528
2. Suk S D, Lee S Y, Kim S M, et al. High performance 5 nm radius twin silicon nanowire MOSFET (TSNWFET): fabrication on bulk Si wafer, characteristics, and reliability. In: IEDM, 2005. 717-720
3. Singh N, Lim F Y, Fang W W, et al. Ultra-narrow silicon nanowire gate-all-around CMOS devices: Impact of diameter, channel-orientation and low temperature on device performance. In: IEDM, 2006. 383-386
4. 2/TiN gate stack. In: IEDM, 2006. 997-1001
5. Tian Y, Huang R, Wang Y, et al. New self-aligned silicon nanowire transistors on bulk substrate fabricated by Epi-free compatible CMOS technology: Process integration, Experimental characterization of carrier transport and low frequency noise. In: IEDM, 2007. 895-899
6. Ernst T, Duraffourg L, Dupre C, et al. Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration? In: IEDM, San Francisco, CA, USA, 2008. 745-749
7. Bidal G, Boeul F, Denorme S, et al. High velocity Si-nano-dot: a candidate for SRAM applications at 16 nm node and below. In: Symp VLSI Tech, 2009. 240-241
8. Bangsaruntip S, Cohen G M, Majumdar A, et al. High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling. In: IEDM, 2009. 297-300
9. Tachi K, Casse M, Jang D, et al. Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires. In: IEDM, 2009. 313-316
10. Sato S, Kamimura H, Arai H, et al. High-performance Si nanowire FET with a semi gate-around structure suitable for integration. Solid-State Electron, 2010, 54: 925-928
11. ITRS 2009 Ed: http://www.itrs.net/Links/2009ITRS/Home2009.htm
12. Sakaki H. Scattering suppression and high-mobility effect of size-quantized electrons in ultrafine semiconductor wire structures. Jpn J Appl Phys, 1980, 19: L735-L738
13. Ohno T, Shiraishi K, Ogawa T. Intrinsic origin of visible light emission from silicon quantum wires: electronics structure and geometrically restricted exciton. Phys Rev Lett, 1992, 69: 2400
14. Lee Y, Nagata T, Kakushima K, et al. A study on electronic structure of silicon nanowires with diverse diameters and orientations for high performance FET. In: IWDTF, 2008. 83-84
15. Lee Y, Kakushima K, Shiraishi K, et al. Size-dependent properties of ballistic silicon nanowire field effect transistors. J Appl Phys, 2010, 107: 113705
16. Lee Y, Kakushima K, Shiraishi K. Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors. Appl Phys Lett. 2010, 97: 032101
17. Iwata J, Takahashi D, Oshiyama A, et al. A massively-parallel electronic-structure calculation based on real-space density functional theory. J Comput Phys, 2010, 229: 2339-2363
18. Natori K. Ballistic metal-oxide-semiconductor field effect transistor. J Appl Phys, 1994, 76: 4879-4890
19. Natori K. Compact modeling of ballistic nanowire MOSFETs. IEEE Trans ED, 2008, 55: 2877-2885
20. Landauer R. Conductance from transmission: Common sense points. Phys Scripta, 1992, T42: 110-114
21. Gnani E, Reggiani S, Gnudi A, et al. Band-structure effects in ultra-scaled silicon nanowires. IEEE Trans ED, 2007, 54: 2243-2254
22. Lundstrom M, Ren Z. Essential physics of carrier transport in nanoscale MOSFETs. IEEE Trans ED, 2002, 49: 133-141
23. Natori K. New solution to high-field transport in semiconductors: I Elastic scattering without energy relaxation. Jpn J Appl Phys, 2009, 48: 034503
24. Natori K. New solution to high-field transport in semiconductors: II Velocity saturation and ballistic transmission. Jpn J Appl Phys, 2009, 48: 034504