4H-SiC BJT characterization at high current high voltage

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2006, Pages

  Gao, Yan ^a   Huang, Alex Q ^a   Xu, Xiaojun ^a   Du, Zhong ^a   Agarwal, Anant K ^b   Krishnaswami, Sumi ^b   Ryu, Sei Hyung ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POWER DENSITY;

ELECTRIC CURRENTS; ELECTRIC POTENTIAL;

SILICON CARBIDE;

EID: 42449087310     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2006.1711879     Document Type: Conference Paper

References (9)

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2. Sei-Hyung Ryu, A. K. Agarwal, J.W. Palmour, M.E.Levinshtein; "1.8 kV, 3.8 A bipolar junction transistors in 4HSiC", ISPSD, 2001 Page(s): 37 -40.
3. Sei-Hyung Ryu; A. K. Agarwal, R. Singh, J.W. Palmour, "1800 V NPN bipolar junction transistors in 4H-SiC", IEEE Electron Device Letters, Volume: 22 Issue: 3, Mar 2001. Page(s): 124-126.
4. Anant K. Agarwal, Sumi Krishnaswami, James Richmond, Craig Capell, Sei-Hyung Ryu, John W. Palmour, Santosh Balachandran1, T. Paul Chowl, Stephen Bayne2, Bruce Geil2, Charles Scozzie2 and Kenneth A. Jones2; " Evolution of the 1600 V, 20 A, SiC Bipolar Junction Transistors" ISPSD 2005 Page(s):271-274.
5. ISE User's manual
6. Nick G. M. Tao, Honggang Liu, and C. R. Bolognesi, "Surface Recombination Currents in "Type-II" NpN InP-GaAsSb-InP Self-Aligned DHBTs" IEEE Trans.Electron Devices, vol.52 No. 6, June 2005.
7. Datasheet STGD5NB120SZ
8. Alex Q. Huang, Bo Zhang, "The Future of Bipolar Power Transistors", IEEE Trans on Electron Devices, VOL.48, NO.11, Nov. 2001.
9. Yan Gao, Alex Q. Huang, Bin Chen, Anant K. Agarwal, Sumi Krishnaswami, Charles Scozzie "Analysis of SiC BJT RBSOA", " ISPSD 2006 Acceped.