Modeling and simulation of a SiC BJT

2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009

Volumn , Issue , 2009, Pages 979-985

  Gachovska, T K ^a   Du, B ^e   Hudgins, J L ^a   Grekov, A ^b   Bryant, A ^c   Santi, E ^b   Mantooth, H A ^d   Agarwal, A ^f  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b The Department of Mechanical Engineering   (United States)

^c UNIVERSITY OF WARWICK   (United Kingdom)

^d University of Arkansas   (United States)

^e DANFOSS A S   (Denmark)

^f Arkansas Power Electronics International Inc   (United States)

Author keywords

Fourier series; Modeling; SiC BJT; Simulation

Indexed keywords

AMBIPOLAR DIFFUSION EQUATION; EXPERIMENTAL TESTING; LUMPED CHARGE MODEL; MATLAB AND SIMULINK; MODELING; MODELING AND SIMULATION; PHYSICAL MODEL; PHYSICS-BASED MODELS; SIC BJT; SWITCHING WAVEFORMS;

BIPOLAR TRANSISTORS; ENERGY CONVERSION; FOURIER ANALYSIS; FOURIER SERIES; HARMONIC ANALYSIS; MATLAB; SILICON CARBIDE;

SIMULATORS;

EID: 72449182243     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2009.5316248     Document Type: Conference Paper

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