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Volumn 19, Issue 4, 2011, Pages 436-441

Performance enhancement of III-V compound multijunction solar cell incorporating transparent electrode and surface treatment

Author keywords

solar cell; surface treatment; transparent electrode

Indexed keywords

ANTIREFLECTION STRUCTURES; CONVENTIONAL METALS; III-V COMPOUNDS; INCIDENT LIGHT; INDIUM TIN OXIDE; ITO FILMS; MULTI JUNCTION SOLAR CELLS; OHMIC PERFORMANCE; PERFORMANCE ENHANCEMENTS; SURFACE STATE; THIN METALS; TRANSITION LAYERS; TRANSPARENT ELECTRODE; TRIPLE JUNCTION SOLAR CELLS; WINDOW LAYER;

EID: 79955646112     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1055     Document Type: Article
Times cited : (27)

References (21)
  • 6
    • 33645165379 scopus 로고    scopus 로고
    • Effects of thermal cycle annealing on reduction of defect density in lattice-mismatched InGaAs solar cells
    • Sasaki T, Arafune K, Lee HS, Erins-Daukes NJ, Tanaka S, Ohshita Y, Yamaguchi M,. Effects of thermal cycle annealing on reduction of defect density in lattice-mismatched InGaAs solar cells. Physica B 2006; 376-377: 626-629.
    • (2006) Physica B , vol.376-377 , pp. 626-629
    • Sasaki, T.1    Arafune, K.2    Lee, H.S.3    Erins-Daukes, N.J.4    Tanaka, S.5    Ohshita, Y.6    Yamaguchi, M.7
  • 8
    • 42449165395 scopus 로고    scopus 로고
    • Effect of thermal annealing on the electrical properties of indium tin oxide (ITO) contact on Be-doped GaAs for optoelectronic applications
    • 035001 (4 pp.).
    • Havard E, Camps T, Bardinal V, Salvagnac L, Armand C, Fontaine C, Pinaud S,. Effect of thermal annealing on the electrical properties of indium tin oxide (ITO) contact on Be-doped GaAs for optoelectronic applications. Semiconductor Science and Technology 2008; 23: 035001 (4 pp.).
    • (2008) Semiconductor Science and Technology , vol.23
    • Havard, E.1    Camps, T.2    Bardinal, V.3    Salvagnac, L.4    Armand, C.5    Fontaine, C.6    Pinaud, S.7
  • 9
    • 33748303085 scopus 로고    scopus 로고
    • Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN
    • Hwang JD, Lin CC, Chen WL,. Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN. Journal of Applied Physics 2006; 100: 044908-1-044908-5.
    • (2006) Journal of Applied Physics , vol.100 , pp. 0449081-0449085
    • Hwang, J.D.1    Lin, C.C.2    Chen, W.L.3
  • 12
    • 62349136132 scopus 로고    scopus 로고
    • 2/Si(100) and MgO(001) by direct current magnetron sputtering system with the oblique target
    • 2/Si(100) and MgO(001) by direct current magnetron sputtering system with the oblique target. Applied Surface Science 2009; 255: 6226-6231.
    • (2009) Applied Surface Science , vol.255 , pp. 6226-6231
    • Yang, Y.1    Qiu, H.2    Chen, X.3    Yu, M.4
  • 13
    • 77953577282 scopus 로고    scopus 로고
    • Enhanced light extraction of GaN-Based light emitting diodes using nanorod arrays
    • Lin CC, Lee CT,. Enhanced light extraction of GaN-Based light emitting diodes using nanorod arrays. Electrochemical and Solid-State Letters 2010; 13: H278-H280.
    • (2010) Electrochemical and Solid-State Letters , vol.13
    • Lin, C.C.1    Lee, C.T.2
  • 14
    • 33645533436 scopus 로고    scopus 로고
    • GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer
    • Kim JK, Gessmann T, Schubert EF, Xi JQ, Luo H, Cho J, Sone C, Park Y,. GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer. Applied Physics Letters 2006; 88: 013501-1-013501-3.
    • (2006) Applied Physics Letters , vol.88 , pp. 0135011-0135013
    • Kim, J.K.1    Gessmann, T.2    Schubert, E.F.3    Xi, J.Q.4    Luo, H.5    Cho, J.6    Sone, C.7    Park, Y.8
  • 16
    • 0001634592 scopus 로고    scopus 로고
    • IMD-Software for modeling the optical properties of multilayer films
    • Windt DL,. IMD-Software for modeling the optical properties of multilayer films. Computer in Physics 1998; 12: 360-370.
    • (1998) Computer in Physics , vol.12 , pp. 360-370
    • Windt, D.L.1
  • 17
    • 13444304648 scopus 로고
    • n qusi-quaternaries and GaInP/AlInP multiple quantum wells
    • n qusi-quaternaries and GaInP/AlInP multiple quantum wells. Journal of Applied Physics 1994; 76: 809-1816.
    • (1994) Journal of Applied Physics , vol.76 , pp. 809-1816
    • Kaneko, Y.1    Kishino, K.2
  • 18
    • 0000220738 scopus 로고    scopus 로고
    • Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy
    • Tsai CD, Lee CT,. Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy. Journal of Applied Physics 2000; 87: 4230-4233.
    • (2000) Journal of Applied Physics , vol.87 , pp. 4230-4233
    • Tsai, C.D.1    Lee, C.T.2
  • 20
    • 43949112646 scopus 로고    scopus 로고
    • Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation
    • Nakayama K, Tanabe K, Atwater HA,. Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation. Journal of Applied Physics 2008; 103: 094503-1-094503-5.
    • (2008) Journal of Applied Physics , vol.103 , pp. 0945031-0945035
    • Nakayama, K.1    Tanabe, K.2    Atwater, H.A.3
  • 21
    • 13444311922 scopus 로고    scopus 로고
    • Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method
    • Lee CT, Lee HY,. Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method. IEEE Photonics Technology Letters 2005; 17: 462-464.
    • (2005) IEEE Photonics Technology Letters , vol.17 , pp. 462-464
    • Lee, C.T.1    Lee, H.Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.