Effect of thermal annealing on the electrical properties of indium tin oxide (ITO) contact on Be-doped GaAs for optoelectronic applications

Semiconductor Science and Technology

Volumn 23, Issue 3, 2008, Pages

  Havard, E ^a   Camps, T ^a   Bardinal, V ^a   Salvagnac, L ^a   Armand, C ^a   Fontaine, C ^a   Pinaud, S ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BERYLLIUM; OPTOELECTRONIC DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

OXYGEN DIFFUSION; SEMICONDUCTOR LAYERS; THERMAL ANNEALING;

INDIUM COMPOUNDS;

EID: 42449165395     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/3/035001     Document Type: Article

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