Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation

Journal of Applied Physics

Volumn 103, Issue 9, 2008, Pages

  Nakayama, Keisuke ^a,b   Tanabe, Katsuaki ^a   Atwater, Harry A ^a  

^a California Institute of Technology   (United States)

^b JAPAN ENERGY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (CHEMICAL); HETEROJUNCTIONS; LATTICE MISMATCH; PASSIVATION; SEMICONDUCTING INDIUM PHOSPHIDE; SOLAR CELLS; WAFER BONDING;

BONDED TUNNEL DIODES; INTERFACIAL TRAP STATE; MULTIJUNCTION SOLAR CELLS; SULFIDE PASSIVATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 43949112646     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2912717     Document Type: Article

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