Preparation of rhombus-shaped micro/nanofluidic channels with dimensions ranging from hundred nanometers to several micrometers

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 11, 2010, Pages 7277-7281

  Xi, Fei ^a   Wang, Yunshan ^a   Wang, Wei ^a   Li, Zhihong ^a   Yossifon, Gilad ^b   Chang, Hsueh Chia ^c  

^a PEKING UNIVERSITY   (China)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c University of Notre Dame   (United States)

Author keywords

Etching filling process; LPCVD; Rhombus shaped micro nanofluidic channel

Indexed keywords

FEATURE SIZES; FILLING PROCESS; LATERAL DIMENSION; LPCVD; NANO-FLUIDIC DEVICES; NANOFABRICATION TECHNIQUES; POWER SUPPLY; RHOMBUS-SHAPED MICRO/NANOFLUIDIC CHANNEL; STEP COVERAGE; SYMMETRY-BREAKING; TARGET PATTERNS;

CHEMICAL VAPOR DEPOSITION; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC RECTIFIERS; ELECTRON BEAMS; ETCHING; MICROMETERS; SILICON COMPOUNDS;

FILLING;

EID: 79955535290     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2842     Document Type: Conference Paper

References (22)

1. J. Han and H. G. Craighead, Science 288, 1026 (2000).
2. R. B. Schoch, J. Han, and P. Renaud, Rev. Mod. Phys. 80, 839 (2008).
3. H.-C. Chang and G. Yossifon, Biomicrofluidics 3, 012001 (2009).
4. R. Karnik, K. Castelino, R. Fan, P. Yang, and A. Majumdar, Nano Lett. 5, 1638 (2005).
5. F. H. J. van der Heyden, D. J. Bonthuis, D. Stein, C. Meyer, and C. Dekker, Nano Lett. 7, 1022 (2007).
6. G. Yossifon and H.-C. Chang, Phys. Rev. Lett. 101, 254501 (2008).
7. G. Yossifon, Y.-C. Chang, and H.-C. Chang, Phys. Rev. Lett. 103, 154502 (2009).
8. D. G. L. Chow, J. F. McDonald, D. C. King, W. Smith, K. Molnar, and A. J. Stecki, J. Vac. Sci. TechnoL B 1, 1383 (1983).
9. J. Melngailis, J. Vac. Sci. Technol. B 5, 469 (1987).
10. S. Reyntjens and R. Puers, J. Micromech. Microeng. 11, 287 (2001).
11. S. Matsui and Y. Ochiai, Nanotechnology 7, 247 (1996).
12. T. H. P. Chang, M. G. R. Thomson, E. Kratschmer, H. S. Kim, M. L. Yu, K. Y. Lee, S. A. Rishton, and B. W. Hussey, J. Vac. Sci. Technol. B 14, 3774 (1996).
13. G. F. Cerofolini, P. Amato, and E. Romano, Semicond. Sci. TechnoL 23, 075020 (2008).
14. Y. K. Choi, T. J. King, and C. Hu, IEEE Transactions on Electron Devices 49, 436 (2002).
15. C. Lee, E. H. Yang, N. V. Myung, and T. George, Nano Lett. 3, 1339 (2003).
16. W. H. Chu, R. Chin, T. Huen, and M. Ferrari, J. Microelectromech. Syst. 8, 34 (1999).
17. A. P. Han, N. F. de Rooij, and U. Staufer, Nanotechnology 17, 2498 (2006).
18. P. Mao and J. Han, Lab Chip. 5, 837 (2005).
19. Z. S. Siwy, Adv. Funct. Mater 16, 735 (2006).
20. H. Cao, J. O. Tegenfeldt, R. H. Austin, and S. Y. Chou, Appl. Phys. Lett. 81, 3058 (2002).
21. T. Smy, S. K. Dew, and R. V. Joshi, Thin Solid Films 415, 32 (2002).
22. Y. Lei, W. Wang, H. Yu, Y. Luo, T. Li, Y. Jin, H. Zhang, and Z. Li, J. Micromech. Microeng. 19, 035013 (2009).