Ammonia sensing properties of a Pt/AlGaN/GaN schottky diode

IEEE Transactions on Electron Devices

Volumn 58, Issue 5, 2011, Pages 1541-1547

  Chen, Tai You ^a   Chen, Huey Ing ^a   Liu, Yi Jung ^a   Huang, Chien Chang ^a   Hsu, Chi Shiang ^a   Chang, Chung Fu ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaN; ammonia; Schottky diode; sensor

Indexed keywords

ALGAN; ALGAN/GAN; AMMONIA ADSORPTION; AMMONIA CONCENTRATIONS; AMMONIA DETECTION; AMMONIA GAS SENSORS; AMMONIA SENSING; ENDOTHERMIC REACTIONS; HYDROGEN ADSORPTION; METAL SEMICONDUCTOR INTERFACE; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY DIODE; SCHOTTKY DIODES; SENSOR STRUCTURES; SINGLE CHIPS; STATE BEHAVIOR;

AMMONIA; CHEMICAL SENSORS; DIODES; GALLIUM NITRIDE; MICROWAVE DEVICES; MICROWAVE SENSORS; SCHOTTKY BARRIER DIODES; THERMODYNAMICS;

GAS ADSORPTION;

EID: 79955528919     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2115245     Document Type: Article

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