GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles

Electronics Letters

Volumn 45, Issue 4, 2009, Pages 231-233

  Chiu, S Y ^a   Huang, H W ^a   Liang, K C ^a   Huang, T H ^a   Liu, K P ^a   Tsai, J H ^b   Lour, W S ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROGEN; MIXTURES; NANOPARTICLES; NONMETALS; PALLADIUM; SEMICONDUCTING GALLIUM; SENSORS; SILICON COMPOUNDS; THREE DIMENSIONAL; TWO DIMENSIONAL;

BIASED VOLTAGES; HEIGHT VARIATIONS; HYDROGEN ATOMS; HYDROGEN DETECTIONS; HYDROGEN SENSORS; RESPONSE TIME; SENSING REGIONS; SENSING RESPONSE; SENSING SURFACES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 60249090446     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20092158     Document Type: Article

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