Simple fabrication technique for field-effect transistor array using as-grown single-walled carbon nanotubes

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Aikawa, Shinya ^a,b   Einarsson, Erik ^a   Inoue, Taiki ^a   Xiang, Rong ^c   Chiashi, Shohei ^a   Shiomi, Junichiro ^a   Nishikawa, Eiichi ^b   Maruyama, Shigeo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

A-CARBON; ALCOHOL CATALYTIC CHEMICAL VAPOR DEPOSITION; AS-GROWN; CHANNEL WIDTHS; CURRENT VOLTAGE; ELECTRODE ARRAYS; ELECTRONIC DEVICE; FABRICATED DEVICE; FABRICATION PROCESS; FABRICATION TECHNIQUE; GATE CHANNEL; HYDROPHOBIC SURFACES; SINGLE-WALLED;

CARBON NANOTUBES; CATALYSTS; CHEMICAL VAPOR DEPOSITION; FABRICATION; FIELD EFFECT TRANSISTORS; HYDROPHOBICITY; MESFET DEVICES; ORGANIC POLYMERS; SELF ASSEMBLED MONOLAYERS; SURFACE CHEMISTRY;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 79955452222     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DN08     Document Type: Article

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