Massive manufacture and characterization of single-walled carbon nanotube field effect transistors

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 1554-1556

  Martin Fernandez, I ^a   Sansa, M ^a   Esplandiu, M J ^b   Lora Tamayo, E ^a   Perez Murano, F ^a   Godignon, P ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

Author keywords

Carbon nanotubes; CNT FET; Nanomanufacturing; Single walled; Transistor

Indexed keywords

AUTOMATIC TEST; BATCH FABRICATION; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; NANO-MANUFACTURING; OPTIMAL DESIGN; SINGLE-WALLED; SINGLE-WALLED CARBON NANOTUBE FIELD EFFECT TRANSISTORS; WAFER LEVEL;

CARBON NANOTUBES; FABRICATION; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MONITORING;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 76949090946     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.026     Document Type: Article

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