A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition

Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

  Mizutani, Takashi ^a   Ohnaka, Hirofumi ^a   Okigawa, Yuki ^a   Kishimoto, Shigeru ^a   Ohno, Yutaka ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; ELECTRICAL PROPERTY; IRRADIATION DAMAGE; IV CHARACTERISTICS; MODULATION CURRENT; OFF CURRENT; ON/OFF RATIO; POTENTIAL BARRIERS; PREFERENTIAL GROWTH; RAMAN SCATTERING SPECTROSCOPY; SCANNING GATE MICROSCOPY; SEMICONDUCTING BEHAVIOR; TOTAL CURRENT;

CARBON NANOTUBES; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; MESFET DEVICES; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMAS; SEMICONDUCTOR GROWTH; VAPORS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 70350104955     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3234389     Document Type: Article

References (22)

1. S. Hasan, S. Salahuddin, M. Vaidyanathan, and M. A. Alam, IEEE Trans. Nanotechnol. 1536-125X 5, 14 (2006). 10.1109/TNANO.2005.858594 (Pubitemid 43131851)
2. R. Saito, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, Appl. Phys. Lett. 0003-6951 60, 2204 (1992). 10.1063/1.107080
3. Y. Li, D. Mann, V. Rolandi, W. Kim, A. Ural, S. Hung, A. Javey, J. Cao, D. Wang, E. Yenilmez, Q. Wang, J. F. Gibbons, Y. Nishi, and H. Dai, Nano Lett. 1530-6984 4, 317 (2004). 10.1021/nl035097c (Pubitemid 38294358)
4. Y. Li, S. Peng, D. Mann, J. Cao, R. Tu, K. J. Cho, and H. Dai, J. Phys. Chem. B 1089-5647 109, 6968 (2005). 10.1021/jp050868h
5. G. Zhang, P. Qi, X. Wang, Y. Lu, X. Li, R. Tu, S. Bangsaruntip, D. Mann, L. Zhang, and H. Dai, Science 0036-8075 314, 974 (2006). 10.1126/science.1133781 (Pubitemid 44749938)
6. K. S. Kim, D. J. Bae, J. R. Kim, K. A. Park, S. C. Lim, J. -J. Kim, W. B. Choi, C. Y. Park, and Y. H. Lee, Adv. Mater. 0935-9648 14, 1818 (2002). 10.1002/adma.200290008
7. H. Ohnaka, Y. Kojima, S. Kishimoto, Y. Ohno, and T. Mizutani, Jpn. J. Appl. Phys., Part 1 0021-4922 45, 5485 (2006). 10.1143/JJAP.45.5485 (Pubitemid 43965726)
8. Y. Kojima, S. Kishimoto, Y. Ohno, A. Sakaki, and T. Mizutani, Jpn. J. Appl. Phys., Part 1 0021-4922 44, 2600 (2005). 10.1143/JJAP.44.2600 (Pubitemid 40892738)
9. Y. Ohno, S. Iwatsuki, T. Hiraoka, T. Okazaki, S. Kishimoto, K. Maezawa, H. Shinohara, and T. Mizutani, Jpn. J. Appl. Phys., Part 1 0021-4922 42, 4116 (2003). 10.1143/JJAP.42.4116
10. L. Yang and J. Han, Phys. Rev. Lett. 0031-9007 85, 154 (2000). 10.1103/PhysRevLett.85.154 (Pubitemid 30895666)
11. T. Miyake and S. Saito, Phys. Rev. B 0163-1829 72, 073404 (2005). 10.1103/PhysRevB.72.073404 (Pubitemid 41506522)
12. 2 /Si substrate using line-and-space mask and the following thermal oxidation of whole wafer surface. The catalyst was deposited on top of the grating. For the catalyst deposition, the procedures of embedding the trench with photo resist, etching back of the photo resist to expose the top surface of the grating, and subsequent catalyst metal evaporation/liftoff were used.
13. www.photon.t.u-tokyo.ac.jp/.
14. E. Ju Bae, Y. -S. Min, D. Kang, J. -H. Ko, and W. Park, Chem. Mater. 0897-4756 17, 5141 (2005). 10.1021/cm050889o (Pubitemid 41476061)
15. M. Hiramatsu, M. Taniguchi, H. Nagao, Y. Ando, and M. Hori, Jpn. J. Appl. Phys., Part 1 0021-4922 44, 1150 (2005). 10.1143/JJAP.44.1150 (Pubitemid 40540901)
16. Y. Ohno, S. Kishimoto, and T. Mizutani, Jpn. J. Appl. Phys., Part 1 0021-4922 44, 1592 (2005). 10.1143/JJAP.44.1592 (Pubitemid 40892526)
17. K. Kanzaki, S. Suzuki, H. Inokawa, Y. Ono, A. Vijayaraghavan, and Y. Kobayashi, J. Appl. Phys. 0021-8979 101, 034317 (2007). 10.1063/1.2434822 (Pubitemid 46280923)
18. L. -G. Tien, C. -H. Tsai, F. -Y. Li, and M. -H. Lee, Diamond Relat. Mater. 0925-9635 17, 563 (2008). 10.1016/j.diamond.2007.08.015 (Pubitemid 351608771)
19. S. V. Rotkin and K. Hess, Appl. Phys. Lett. 0003-6951 84, 3139 (2004). 10.1063/1.1710717
20. S. J. Tans and C. Dekker, Nature (London) 0028-0836 404, 834 (2000). 10.1038/35009026 (Pubitemid 30230325)
21. M. Freitag and A. T. Johnson, Phys. Rev. Lett. 0031-9007 89, 216801 (2002). 10.1103/PhysRevLett.89.216801
22. A. Bachtold, M. S. Fuhrer, S. Plyasunov, M. Forero, E. H. Anderson, A. Zettl, and P. L. McEuen, Phys. Rev. Lett. 0031-9007 84, 6082 (2000). 10.1103/PhysRevLett.84.6082 (Pubitemid 30877871)