Radiation-induced H+ trapping in buried SiO2

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 241-244

  Vanheusden, K ^a,c   Schwank, J R ^a   Warren, W L ^a   Fleetwood, D M ^a   Devine, R A B ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b ORANGE LABS   (France)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; HYDROGEN; INTERFACES (MATERIALS); ION IMPLANTATION; IRRADIATION; PROTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SUBSTRATES; ION BOMBARDMENT; RADIATION EFFECTS; SILICON WAFERS;

BURIED OXIDES; RADIATION INDUCED HYDROGEN ION TRAPPING; HYDROGEN TRAPPING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031150286     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00056-7     Document Type: Article

References (6)

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6. See e.g. N.S. Saks and R.W. Rendell, Appl. Phys. Lett. 61, 3014 (1992).