Analytical threshold voltage model for ultrathin SOI MOSFET's including short-channel and floating-body effects

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 729-737

  Adan, Alberto O ^a   Higashi, Kenichi ^a   Fukushima, Yasumori ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

IMPACT IONIZATION; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; ULTRATHIN FILMS;

FLOATING BODY EFFECTS; KINK EFFECT; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0032625315     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753707     Document Type: Article

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